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NSBA113EF3T5G


Part Number NSBA113EF3T5G
Zouser Part # NSBA113EF3T5G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS DUAL PNP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NSBA113EF3T5G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock506 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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NSBA113EF3T5G Specifications

Part Number NSBA113EF3T5G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer ON Semiconductor
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 254mW
Mounting Type Surface Mount
Package / Case SOT-1123
Supplier Device Package SOT-1123

NSBA113EF3T5G Documents

NSBA113EF3T5G, NSBA113EF3T5G Datasheet (Total Pages: 12, Size: 426.03 KB)
MUN2130T1G Datasheet CoverMUN2130T1G Datasheet Page 2MUN2130T1G Datasheet Page 3MUN2130T1G Datasheet Page 4MUN2130T1G Datasheet Page 5MUN2130T1G Datasheet Page 6MUN2130T1G Datasheet Page 7MUN2130T1G Datasheet Page 8MUN2130T1G Datasheet Page 9MUN2130T1G Datasheet Page 10MUN2130T1G Datasheet Page 11MUN2130T1G Datasheet Page 12

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