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NSV40302PDR2G
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NSV40302PDR2G


Part Number NSV40302PDR2G
Zouser Part # NSV40302PDR2G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Arrays
Description TRANS NPN/PNP 40V 3A 8SOIC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NSV40302PDR2G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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NSV40302PDR2G Specifications

Part Number NSV40302PDR2G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays
Manufacturer ON Semiconductor
Series -
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
Power - Max 653mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

NSV40302PDR2G Documents

NSV40302PDR2G, NSV40302PDR2G Datasheet (Total Pages: 9, Size: 92.76 KB)
NSV40302PDR2G Datasheet CoverNSV40302PDR2G Datasheet Page 2NSV40302PDR2G Datasheet Page 3NSV40302PDR2G Datasheet Page 4NSV40302PDR2G Datasheet Page 5NSV40302PDR2G Datasheet Page 6NSV40302PDR2G Datasheet Page 7NSV40302PDR2G Datasheet Page 8NSV40302PDR2G Datasheet Page 9

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