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NSVB123JPDXV6T1G |
|
| Part Number | NSVB123JPDXV6T1G |
| Zouser Part # | NSVB123JPDXV6T1G |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
| Description | TRANS PREBIAS NPN/PNP SOT563 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | NSVB123JPDXV6T1G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 146 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
NSVB123JPDXV6T1G Specifications
| Part Number | NSVB123JPDXV6T1G | |
| Brand | ON Semiconductor | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2kOhms | |
| Resistor - Emitter Base (R2) | 4.7kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 500mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | SOT-563 |
NSVB123JPDXV6T1G Documents
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