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NTD18N06-1G


Part Number NTD18N06-1G
Zouser Part # NTD18N06-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 18A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NTD18N06-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock638 - More on Order
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Lead-TimeTo be Confirmed
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NTD18N06-1G Specifications

Part Number NTD18N06-1G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD18N06-1G Documents

NTD18N06-1G, NTD18N06-1G Datasheet (Total Pages: 9, Size: 162.77 KB)
NTD18N06G Datasheet CoverNTD18N06G Datasheet Page 2NTD18N06G Datasheet Page 3NTD18N06G Datasheet Page 4NTD18N06G Datasheet Page 5NTD18N06G Datasheet Page 6NTD18N06G Datasheet Page 7NTD18N06G Datasheet Page 8NTD18N06G Datasheet Page 9

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