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NTD4856N-1G


Part Number NTD4856N-1G
Zouser Part # NTD4856N-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 13.3A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NTD4856N-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock545 - More on Order
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Lead-TimeTo be Confirmed
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NTD4856N-1G Specifications

Part Number NTD4856N-1G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 13.3A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2241pF @ 12V
FET Feature -
Power Dissipation (Max) 1.33W (Ta), 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD4856N-1G Documents

NTD4856N-1G, NTD4856N-1G Datasheet (Total Pages: 8, Size: 129.99 KB)
NVD4856NT4G Datasheet CoverNVD4856NT4G Datasheet Page 2NVD4856NT4G Datasheet Page 3NVD4856NT4G Datasheet Page 4NVD4856NT4G Datasheet Page 5NVD4856NT4G Datasheet Page 6NVD4856NT4G Datasheet Page 7NVD4856NT4G Datasheet Page 8

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