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NTD4979N-35G


Part Number NTD4979N-35G
Zouser Part # NTD4979N-35G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 9.4A IPAK TRIMME
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NTD4979N-35G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock370 - More on Order
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NTD4979N-35G Specifications

Part Number NTD4979N-35G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
FET Feature -
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD4979N-35G Documents

NTD4979N-35G, NTD4979N-35G Datasheet (Total Pages: 7, Size: 117.98 KB)
NTD4979NT4G Datasheet CoverNTD4979NT4G Datasheet Page 2NTD4979NT4G Datasheet Page 3NTD4979NT4G Datasheet Page 4NTD4979NT4G Datasheet Page 5NTD4979NT4G Datasheet Page 6NTD4979NT4G Datasheet Page 7

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