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NTHL080N120SC1


Part Number NTHL080N120SC1
Zouser Part # NTHL080N120SC1
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description SIC MOS TO247 80MW 1200V
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NTHL080N120SC1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock815 - More on Order
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NTHL080N120SC1 Specifications

Part Number NTHL080N120SC1
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V
FET Feature -
Power Dissipation (Max) 348W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

NTHL080N120SC1 Documents

NTHL080N120SC1, NTHL080N120SC1 Datasheet (Total Pages: 7, Size: 368.58 KB)
NTHL080N120SC1 Datasheet CoverNTHL080N120SC1 Datasheet Page 2NTHL080N120SC1 Datasheet Page 3NTHL080N120SC1 Datasheet Page 4NTHL080N120SC1 Datasheet Page 5NTHL080N120SC1 Datasheet Page 6NTHL080N120SC1 Datasheet Page 7

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