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PDTB113ES,126
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PDTB113ES,126


Part Number PDTB113ES,126
Zouser Part # PDTB113ES-126
Manufacturer NXP
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 500MW TO92-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PDTB113ES,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock215 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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PDTB113ES,126 Specifications

Part Number PDTB113ES,126
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer NXP USA Inc.
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

PDTB113ES,126 Documents

PDTB113ES, PDTB113ES Datasheet (Total Pages: 10, Size: 130.18 KB)
PDTB113EK Datasheet CoverPDTB113EK Datasheet Page 2PDTB113EK Datasheet Page 3PDTB113EK Datasheet Page 4PDTB113EK Datasheet Page 5PDTB113EK Datasheet Page 6PDTB113EK Datasheet Page 7PDTB113EK Datasheet Page 8PDTB113EK Datasheet Page 9PDTB113EK Datasheet Page 10

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