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PDTB123ES,126
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PDTB123ES,126


Part Number PDTB123ES,126
Zouser Part # PDTB123ES-126
Manufacturer NXP
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 500MW TO92-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PDTB123ES,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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PDTB123ES,126 Specifications

Part Number PDTB123ES,126
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer NXP USA Inc.
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

PDTB123ES,126 Documents

PDTB123ES, PDTB123ES Datasheet (Total Pages: 10, Size: 130.02 KB)
PDTB123EK Datasheet CoverPDTB123EK Datasheet Page 2PDTB123EK Datasheet Page 3PDTB123EK Datasheet Page 4PDTB123EK Datasheet Page 5PDTB123EK Datasheet Page 6PDTB123EK Datasheet Page 7PDTB123EK Datasheet Page 8PDTB123EK Datasheet Page 9PDTB123EK Datasheet Page 10

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