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PDTB123YS,126
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PDTB123YS,126


Part Number PDTB123YS,126
Zouser Part # PDTB123YS-126
Manufacturer NXP
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 500MW TO92-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PDTB123YS,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock205 - More on Order
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Lead-TimeTo be Confirmed
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PDTB123YS,126 Specifications

Part Number PDTB123YS,126
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer NXP USA Inc.
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

PDTB123YS,126 Documents

PDTB123YS, PDTB123YS Datasheet (Total Pages: 10, Size: 130.33 KB)
PDTB123YK Datasheet CoverPDTB123YK Datasheet Page 2PDTB123YK Datasheet Page 3PDTB123YK Datasheet Page 4PDTB123YK Datasheet Page 5PDTB123YK Datasheet Page 6PDTB123YK Datasheet Page 7PDTB123YK Datasheet Page 8PDTB123YK Datasheet Page 9PDTB123YK Datasheet Page 10

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