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PDTD123ES,126
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PDTD123ES,126


Part Number PDTD123ES,126
Zouser Part # PDTD123ES-126
Manufacturer NXP
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 500MW TO92-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PDTD123ES,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock538 - More on Order
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Lead-TimeTo be Confirmed
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PDTD123ES,126 Specifications

Part Number PDTD123ES,126
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer NXP USA Inc.
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

PDTD123ES,126 Documents

PDTD123ES, PDTD123ES Datasheet (Total Pages: 11, Size: 240.75 KB)
PDTD123EK Datasheet CoverPDTD123EK Datasheet Page 2PDTD123EK Datasheet Page 3PDTD123EK Datasheet Page 4PDTD123EK Datasheet Page 5PDTD123EK Datasheet Page 6PDTD123EK Datasheet Page 7PDTD123EK Datasheet Page 8PDTD123EK Datasheet Page 9PDTD123EK Datasheet Page 10PDTD123EK Datasheet Page 11

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