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PDTD123ES,126 |
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Part Number | PDTD123ES,126 |
Zouser Part # | PDTD123ES-126 |
Manufacturer | NXP |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN 500MW TO92-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | PDTD123ES,126 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 538 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
PDTD123ES,126 Specifications
Part Number | PDTD123ES,126 | |
Brand | NXP | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | NXP USA Inc. | |
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 500mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms | |
Resistor - Emitter Base (R2) | 2.2 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 500mW | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
Supplier Device Package | TO-92-3 |
PDTD123ES,126 Documents
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