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PSMN040-200W,127
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PSMN040-200W,127


Part Number PSMN040-200W,127
Zouser Part # PSMN040-200W-127
Manufacturer NXP
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 50A SOT429
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PSMN040-200W,127 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock354 - More on Order
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Lead-TimeTo be Confirmed
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PSMN040-200W,127 Specifications

Part Number PSMN040-200W,127
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer NXP USA Inc.
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

PSMN040-200W,127 Documents

PSMN040-200W, PSMN040-200W Datasheet (Total Pages: 7, Size: 87.01 KB)
PSMN040-200W Datasheet CoverPSMN040-200W Datasheet Page 2PSMN040-200W Datasheet Page 3PSMN040-200W Datasheet Page 4PSMN040-200W Datasheet Page 5PSMN040-200W Datasheet Page 6PSMN040-200W Datasheet Page 7

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