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RN1102T5LFT


Part Number RN1102T5LFT
Zouser Part # RN1102T5LFT
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 0.1W SSM
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models RN1102T5LFT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock262 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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RN1102T5LFT Specifications

Part Number RN1102T5LFT
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM

RN1102T5LFT Documents

RN1102T5LFT, RN1102T5LFT Datasheet (Total Pages: 8, Size: 562.02 KB)
RN1101ACT(TPL3) Datasheet CoverRN1101ACT(TPL3) Datasheet Page 2RN1101ACT(TPL3) Datasheet Page 3RN1101ACT(TPL3) Datasheet Page 4RN1101ACT(TPL3) Datasheet Page 5RN1101ACT(TPL3) Datasheet Page 6RN1101ACT(TPL3) Datasheet Page 7RN1101ACT(TPL3) Datasheet Page 8

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