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RN1108MFV,L3F |
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Part Number | RN1108MFV,L3F |
Zouser Part # | RN1108MFV-L3F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1108MFV,L3F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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Quick Inquiry
In Stock | 391 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
RN1108MFV,L3F Specifications
Part Number | RN1108MFV,L3F | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms | |
Resistor - Emitter Base (R2) | 47 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 150mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Supplier Device Package | VESM |
RN1108MFV,L3F Documents

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