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RN1110MFV,L3F
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RN1110MFV,L3F


Part Number RN1110MFV,L3F
Zouser Part # RN1110MFV-L3F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 0.15W VESM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1110MFV,L3F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock329 - More on Order
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RN1110MFV,L3F Specifications

Part Number RN1110MFV,L3F
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM

RN1110MFV,L3F Documents

RN1110MFV, RN1110MFV Datasheet (Total Pages: 5, Size: 122.96 KB)
RN1110MFV Datasheet CoverRN1110MFV Datasheet Page 2RN1110MFV Datasheet Page 3RN1110MFV Datasheet Page 4RN1110MFV Datasheet Page 5

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