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RN1112CT(TPL3)


Part Number RN1112CT(TPL3)
Zouser Part # RN1112CT-TPL3
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 0.05W CST3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models RN1112CT(TPL3) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock531 - More on Order
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RN1112CT(TPL3) Specifications

Part Number RN1112CT(TPL3)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 20V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 50mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3

RN1112CT(TPL3) Documents

RN1112CT(TPL3), RN1112CT(TPL3) Datasheet (Total Pages: 6, Size: 174.67 KB)
RN1113CT(TPL3) Datasheet CoverRN1113CT(TPL3) Datasheet Page 2RN1113CT(TPL3) Datasheet Page 3RN1113CT(TPL3) Datasheet Page 4RN1113CT(TPL3) Datasheet Page 5RN1113CT(TPL3) Datasheet Page 6

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