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RN1426TE85LF
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RN1426TE85LF


Part Number RN1426TE85LF
Zouser Part # RN1426TE85LF
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 200MW SMINI
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1426TE85LF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock385 - More on Order
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RN1426TE85LF Specifications

Part Number RN1426TE85LF
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 300MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini

RN1426TE85LF Documents

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