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RN1902T5LFT
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RN1902T5LFT


Part Number RN1902T5LFT
Zouser Part # RN1902T5LFT
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1902T5LFT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock231 - More on Order
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RN1902T5LFT Specifications

Part Number RN1902T5LFT
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

RN1902T5LFT Documents

RN1902T5LFT, RN1902T5LFT Datasheet (Total Pages: 7, Size: 460.73 KB)
RN1906 Datasheet CoverRN1906 Datasheet Page 2RN1906 Datasheet Page 3RN1906 Datasheet Page 4RN1906 Datasheet Page 5RN1906 Datasheet Page 6RN1906 Datasheet Page 7

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