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RN2967(TE85L,F)
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RN2967(TE85L,F)


Part Number RN2967(TE85L,F)
Zouser Part # RN2967-TE85L-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2PNP PREBIAS 0.2W US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN2967(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock4,795 - More on Order
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RN2967(TE85L,F) Specifications

Part Number RN2967(TE85L,F)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package US6

RN2967(TE85L,F) Documents

RN2967(TE85L, RN2967(TE85L Datasheet (Total Pages: 6, Size: 360.66 KB)
RN2969(TE85L Datasheet CoverRN2969(TE85L Datasheet Page 2RN2969(TE85L Datasheet Page 3RN2969(TE85L Datasheet Page 4RN2969(TE85L Datasheet Page 5RN2969(TE85L Datasheet Page 6

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