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RQ1C065UNTR
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RQ1C065UNTR


Part Number RQ1C065UNTR
Zouser Part # RQ1C065UNTR
Manufacturer Rohm Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 6.5A TSMT8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RQ1C065UNTR PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock287 - More on Order
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Lead-TimeCan Ship Immediately
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RQ1C065UNTR Specifications

Part Number RQ1C065UNTR
Brand Rohm Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead

RQ1C065UNTR Documents

RQ1C065UNTR, RQ1C065UNTR Datasheet (Total Pages: 12, Size: 2,710.91 KB)
RQ1C065UNTR Datasheet CoverRQ1C065UNTR Datasheet Page 2RQ1C065UNTR Datasheet Page 3RQ1C065UNTR Datasheet Page 4RQ1C065UNTR Datasheet Page 5RQ1C065UNTR Datasheet Page 6RQ1C065UNTR Datasheet Page 7RQ1C065UNTR Datasheet Page 8RQ1C065UNTR Datasheet Page 9RQ1C065UNTR Datasheet Page 10RQ1C065UNTR Datasheet Page 11RQ1C065UNTR Datasheet Page 12

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