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RQK0609CQDQS#H1


Part Number RQK0609CQDQS#H1
Zouser Part # RQK0609CQDQS-H1
Manufacturer Renesas Electronics America
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH UPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models RQK0609CQDQS#H1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock531 - More on Order
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Lead-TimeTo be Confirmed
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RQK0609CQDQS#H1 Specifications

Part Number RQK0609CQDQS#H1
Brand Renesas Electronics America
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Renesas Electronics America
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package UPAK
Package / Case TO-243AA

RQK0609CQDQS#H1 Documents

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