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RT1C060UNTR
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RT1C060UNTR


Part Number RT1C060UNTR
Zouser Part # RT1C060UNTR
Manufacturer Rohm Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 6A TSST8
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models RT1C060UNTR PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock123 - More on Order
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RT1C060UNTR Specifications

Part Number RT1C060UNTR
Brand Rohm Semiconductor
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
FET Feature -
Power Dissipation (Max) 650mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSST
Package / Case 8-SMD, Flat Lead

RT1C060UNTR Documents

RT1C060UNTR, RT1C060UNTR Datasheet (Total Pages: 6, Size: 315.11 KB)
RT1C060UNTR Datasheet CoverRT1C060UNTR Datasheet Page 2RT1C060UNTR Datasheet Page 3RT1C060UNTR Datasheet Page 4RT1C060UNTR Datasheet Page 5RT1C060UNTR Datasheet Page 6

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