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SCT2H12NYTB |
|
| Part Number | SCT2H12NYTB |
| Zouser Part # | SCT2H12NYTB |
| Manufacturer | Rohm Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | 1700V 1.2 OHM 4A SIC FET |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SCT2H12NYTB PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 2,903 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
SCT2H12NYTB Specifications
| Part Number | SCT2H12NYTB | |
| Brand | Rohm Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1700V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V | |
| Vgs(th) (Max) @ Id | 4V @ 410µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V | |
| Vgs (Max) | +22V, -6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 44W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-268 | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
SCT2H12NYTB Documents
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