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SCTW90N65G2V


Part Number SCTW90N65G2V
Zouser Part # SCTW90N65G2V
Manufacturer STMicroelectronics
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description SILICON CARBIDE POWER MOSFET 650
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SCTW90N65G2V PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock508 - More on Order
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SCTW90N65G2V Specifications

Part Number SCTW90N65G2V
Brand STMicroelectronics
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3

SCTW90N65G2V Documents

SCTW90N65G2V, SCTW90N65G2V Datasheet (Total Pages: 12, Size: 397.46 KB)
SCTW90N65G2V Datasheet CoverSCTW90N65G2V Datasheet Page 2SCTW90N65G2V Datasheet Page 3SCTW90N65G2V Datasheet Page 4SCTW90N65G2V Datasheet Page 5SCTW90N65G2V Datasheet Page 6SCTW90N65G2V Datasheet Page 7SCTW90N65G2V Datasheet Page 8SCTW90N65G2V Datasheet Page 9SCTW90N65G2V Datasheet Page 10SCTW90N65G2V Datasheet Page 11SCTW90N65G2V Datasheet Page 12

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