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SI1011X-T1-GE3


Part Number SI1011X-T1-GE3
Zouser Part # SI1011X-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 12V SC-89
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI1011X-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock265 - More on Order
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SI1011X-T1-GE3 Specifications

Part Number SI1011X-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 6V
FET Feature -
Power Dissipation (Max) 190mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490

SI1011X-T1-GE3 Documents

SI1011X-T1-GE3, SI1011X-T1-GE3 Datasheet (Total Pages: 8, Size: 160.86 KB)
SI1011X-T1-GE3 Datasheet CoverSI1011X-T1-GE3 Datasheet Page 2SI1011X-T1-GE3 Datasheet Page 3SI1011X-T1-GE3 Datasheet Page 4SI1011X-T1-GE3 Datasheet Page 5SI1011X-T1-GE3 Datasheet Page 6SI1011X-T1-GE3 Datasheet Page 7SI1011X-T1-GE3 Datasheet Page 8

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