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SI2311DS-T1-E3
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SI2311DS-T1-E3


Part Number SI2311DS-T1-E3
Zouser Part # SI2311DS-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 8V 3A SOT23
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI2311DS-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock331 - More on Order
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SI2311DS-T1-E3 Specifications

Part Number SI2311DS-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 4V
FET Feature -
Power Dissipation (Max) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3

SI2311DS-T1-E3 Documents

SI2311DS-T1-E3, SI2311DS-T1-E3 Datasheet (Total Pages: 5, Size: 103.52 KB)
SI2311DS-T1-GE3 Datasheet CoverSI2311DS-T1-GE3 Datasheet Page 2SI2311DS-T1-GE3 Datasheet Page 3SI2311DS-T1-GE3 Datasheet Page 4SI2311DS-T1-GE3 Datasheet Page 5

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