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SI2351DS-T1-E3


Part Number SI2351DS-T1-E3
Zouser Part # SI2351DS-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 2.8A SOT23-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI2351DS-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock319 - More on Order
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SI2351DS-T1-E3 Specifications

Part Number SI2351DS-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

SI2351DS-T1-E3 Documents

SI2351DS-T1-E3, SI2351DS-T1-E3 Datasheet (Total Pages: 7, Size: 112.07 KB)
SI2351DS-T1-GE3 Datasheet CoverSI2351DS-T1-GE3 Datasheet Page 2SI2351DS-T1-GE3 Datasheet Page 3SI2351DS-T1-GE3 Datasheet Page 4SI2351DS-T1-GE3 Datasheet Page 5SI2351DS-T1-GE3 Datasheet Page 6SI2351DS-T1-GE3 Datasheet Page 7

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