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SI3407DV-T1-E3
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SI3407DV-T1-E3


Part Number SI3407DV-T1-E3
Zouser Part # SI3407DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 8A 6-TSOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI3407DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock471 - More on Order
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SI3407DV-T1-E3 Specifications

Part Number SI3407DV-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

SI3407DV-T1-E3 Documents

SI3407DV-T1-E3, SI3407DV-T1-E3 Datasheet (Total Pages: 11, Size: 207.2 KB)
SI3407DV-T1-E3 Datasheet CoverSI3407DV-T1-E3 Datasheet Page 2SI3407DV-T1-E3 Datasheet Page 3SI3407DV-T1-E3 Datasheet Page 4SI3407DV-T1-E3 Datasheet Page 5SI3407DV-T1-E3 Datasheet Page 6SI3407DV-T1-E3 Datasheet Page 7SI3407DV-T1-E3 Datasheet Page 8SI3407DV-T1-E3 Datasheet Page 9SI3407DV-T1-E3 Datasheet Page 10SI3407DV-T1-E3 Datasheet Page 11

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