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SI3430DV-T1-E3
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SI3430DV-T1-E3


Part Number SI3430DV-T1-E3
Zouser Part # SI3430DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 1.8A 6-TSOP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI3430DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock9,648 - More on Order
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SI3430DV-T1-E3 Specifications

Part Number SI3430DV-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

SI3430DV-T1-E3 Documents

SI3430DV-T1-E3, SI3430DV-T1-E3 Datasheet (Total Pages: 9, Size: 227.68 KB)
SI3430DV-T1-GE3 Datasheet CoverSI3430DV-T1-GE3 Datasheet Page 2SI3430DV-T1-GE3 Datasheet Page 3SI3430DV-T1-GE3 Datasheet Page 4SI3430DV-T1-GE3 Datasheet Page 5SI3430DV-T1-GE3 Datasheet Page 6SI3430DV-T1-GE3 Datasheet Page 7SI3430DV-T1-GE3 Datasheet Page 8SI3430DV-T1-GE3 Datasheet Page 9

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