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SI3440DV-T1-E3
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SI3440DV-T1-E3


Part Number SI3440DV-T1-E3
Zouser Part # SI3440DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 150V 1.2A 6-TSOP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI3440DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI3440DV-T1-E3 Specifications

Part Number SI3440DV-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

SI3440DV-T1-E3 Documents

SI3440DV-T1-E3, SI3440DV-T1-E3 Datasheet (Total Pages: 10, Size: 189.34 KB)
SI3440DV-T1-GE3 Datasheet CoverSI3440DV-T1-GE3 Datasheet Page 2SI3440DV-T1-GE3 Datasheet Page 3SI3440DV-T1-GE3 Datasheet Page 4SI3440DV-T1-GE3 Datasheet Page 5SI3440DV-T1-GE3 Datasheet Page 6SI3440DV-T1-GE3 Datasheet Page 7SI3440DV-T1-GE3 Datasheet Page 8SI3440DV-T1-GE3 Datasheet Page 9SI3440DV-T1-GE3 Datasheet Page 10

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