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SI3473DV-T1-E3
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SI3473DV-T1-E3


Part Number SI3473DV-T1-E3
Zouser Part # SI3473DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 12V 5.9A 6-TSOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI3473DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock197 - More on Order
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SI3473DV-T1-E3 Specifications

Part Number SI3473DV-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

SI3473DV-T1-E3 Documents

SI3473DV-T1-E3, SI3473DV-T1-E3 Datasheet (Total Pages: 10, Size: 203.27 KB)
SI3473DV-T1-GE3 Datasheet CoverSI3473DV-T1-GE3 Datasheet Page 2SI3473DV-T1-GE3 Datasheet Page 3SI3473DV-T1-GE3 Datasheet Page 4SI3473DV-T1-GE3 Datasheet Page 5SI3473DV-T1-GE3 Datasheet Page 6SI3473DV-T1-GE3 Datasheet Page 7SI3473DV-T1-GE3 Datasheet Page 8SI3473DV-T1-GE3 Datasheet Page 9SI3473DV-T1-GE3 Datasheet Page 10

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