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SI3586DV-T1-E3
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SI3586DV-T1-E3


Part Number SI3586DV-T1-E3
Zouser Part # SI3586DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 2.9A 6TSOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI3586DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock439 - More on Order
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SI3586DV-T1-E3 Specifications

Part Number SI3586DV-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

SI3586DV-T1-E3 Documents

SI3586DV-T1-E3, SI3586DV-T1-E3 Datasheet (Total Pages: 9, Size: 113.97 KB)
SI3586DV-T1-GE3 Datasheet CoverSI3586DV-T1-GE3 Datasheet Page 2SI3586DV-T1-GE3 Datasheet Page 3SI3586DV-T1-GE3 Datasheet Page 4SI3586DV-T1-GE3 Datasheet Page 5SI3586DV-T1-GE3 Datasheet Page 6SI3586DV-T1-GE3 Datasheet Page 7SI3586DV-T1-GE3 Datasheet Page 8SI3586DV-T1-GE3 Datasheet Page 9

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