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SI3911DV-T1-E3
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SI3911DV-T1-E3


Part Number SI3911DV-T1-E3
Zouser Part # SI3911DV-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 1.8A 6TSOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI3911DV-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock196 - More on Order
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SI3911DV-T1-E3 Specifications

Part Number SI3911DV-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.8A
Rds On (Max) @ Id, Vgs 145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

SI3911DV-T1-E3 Documents

SI3911DV-T1-E3, SI3911DV-T1-E3 Datasheet (Total Pages: 5, Size: 103.53 KB)
SI3911DV-T1-E3 Datasheet CoverSI3911DV-T1-E3 Datasheet Page 2SI3911DV-T1-E3 Datasheet Page 3SI3911DV-T1-E3 Datasheet Page 4SI3911DV-T1-E3 Datasheet Page 5

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