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SI4409DY-T1-E3
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SI4409DY-T1-E3


Part Number SI4409DY-T1-E3
Zouser Part # SI4409DY-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 150V 1.3A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4409DY-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock221 - More on Order
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SI4409DY-T1-E3 Specifications

Part Number SI4409DY-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 332pF @ 50V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 4.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

SI4409DY-T1-E3 Documents

SI4409DY-T1-E3, SI4409DY-T1-E3 Datasheet (Total Pages: 7, Size: 116.35 KB)
SI4409DY-T1-E3 Datasheet CoverSI4409DY-T1-E3 Datasheet Page 2SI4409DY-T1-E3 Datasheet Page 3SI4409DY-T1-E3 Datasheet Page 4SI4409DY-T1-E3 Datasheet Page 5SI4409DY-T1-E3 Datasheet Page 6SI4409DY-T1-E3 Datasheet Page 7

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