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SI4447DY-T1-E3
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SI4447DY-T1-E3


Part Number SI4447DY-T1-E3
Zouser Part # SI4447DY-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 40V 3.3A 8-SOIC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI4447DY-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock16,190 - More on Order
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SI4447DY-T1-E3 Specifications

Part Number SI4447DY-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 15V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 805pF @ 20V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

SI4447DY-T1-E3 Documents

SI4447DY-T1-E3, SI4447DY-T1-E3 Datasheet (Total Pages: 6, Size: 103.12 KB)
SI4447DY-T1-GE3 Datasheet CoverSI4447DY-T1-GE3 Datasheet Page 2SI4447DY-T1-GE3 Datasheet Page 3SI4447DY-T1-GE3 Datasheet Page 4SI4447DY-T1-GE3 Datasheet Page 5SI4447DY-T1-GE3 Datasheet Page 6

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