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SI4666DY-T1-GE3 |
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Part Number | SI4666DY-T1-GE3 |
Zouser Part # | SI4666DY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 25V 16.5A 8-SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI4666DY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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In Stock | 4,106 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
SI4666DY-T1-GE3 Specifications
Part Number | SI4666DY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 1145pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4666DY-T1-GE3 Documents
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