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SI4910DY-T1-E3
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SI4910DY-T1-E3


Part Number SI4910DY-T1-E3
Zouser Part # SI4910DY-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 40V 7.6A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4910DY-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock307 - More on Order
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SI4910DY-T1-E3 Specifications

Part Number SI4910DY-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.6A
Rds On (Max) @ Id, Vgs 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 855pF @ 20V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

SI4910DY-T1-E3 Documents

SI4910DY-T1-E3, SI4910DY-T1-E3 Datasheet (Total Pages: 7, Size: 102.66 KB)
SI4910DY-T1-GE3 Datasheet CoverSI4910DY-T1-GE3 Datasheet Page 2SI4910DY-T1-GE3 Datasheet Page 3SI4910DY-T1-GE3 Datasheet Page 4SI4910DY-T1-GE3 Datasheet Page 5SI4910DY-T1-GE3 Datasheet Page 6SI4910DY-T1-GE3 Datasheet Page 7

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