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SI4966DY-T1-GE3 |
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Part Number | SI4966DY-T1-GE3 |
Zouser Part # | SI4966DY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 20V 8SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI4966DY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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Quick Inquiry
In Stock | 379 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
SI4966DY-T1-GE3 Specifications
Part Number | SI4966DY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Power - Max | 2W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO |
SI4966DY-T1-GE3 Documents
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