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SI5475BDC-T1-GE3


Part Number SI5475BDC-T1-GE3
Zouser Part # SI5475BDC-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 12V 6A 1206-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI5475BDC-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI5475BDC-T1-GE3 Specifications

Part Number SI5475BDC-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 28mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead

SI5475BDC-T1-GE3 Documents

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