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SI5511DC-T1-GE3


Part Number SI5511DC-T1-GE3
Zouser Part # SI5511DC-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 4A 1206-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI5511DC-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI5511DC-T1-GE3 Specifications

Part Number SI5511DC-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3.6A
Rds On (Max) @ Id, Vgs 55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Power - Max 3.1W, 2.6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™

SI5511DC-T1-GE3 Documents

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