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SI5513DC-T1-E3
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SI5513DC-T1-E3


Part Number SI5513DC-T1-E3
Zouser Part # SI5513DC-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 3.1A 1206-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI5513DC-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock376 - More on Order
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SI5513DC-T1-E3 Specifications

Part Number SI5513DC-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A, 2.1A
Rds On (Max) @ Id, Vgs 75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™

SI5513DC-T1-E3 Documents

SI5513DC-T1-E3, SI5513DC-T1-E3 Datasheet (Total Pages: 8, Size: 130.53 KB)
SI5513DC-T1-GE3 Datasheet CoverSI5513DC-T1-GE3 Datasheet Page 2SI5513DC-T1-GE3 Datasheet Page 3SI5513DC-T1-GE3 Datasheet Page 4SI5513DC-T1-GE3 Datasheet Page 5SI5513DC-T1-GE3 Datasheet Page 6SI5513DC-T1-GE3 Datasheet Page 7SI5513DC-T1-GE3 Datasheet Page 8

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