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SI5857DU-T1-E3


Part Number SI5857DU-T1-E3
Zouser Part # SI5857DU-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 6A PPAK CHIPFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI5857DU-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock226 - More on Order
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SI5857DU-T1-E3 Specifications

Part Number SI5857DU-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series LITTLE FOOT®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.3W (Ta), 10.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFet Dual
Package / Case PowerPAK® ChipFET™ Dual

SI5857DU-T1-E3 Documents

SI5857DU-T1-E3, SI5857DU-T1-E3 Datasheet (Total Pages: 10, Size: 139.71 KB)
SI5857DU-T1-GE3 Datasheet CoverSI5857DU-T1-GE3 Datasheet Page 2SI5857DU-T1-GE3 Datasheet Page 3SI5857DU-T1-GE3 Datasheet Page 4SI5857DU-T1-GE3 Datasheet Page 5SI5857DU-T1-GE3 Datasheet Page 6SI5857DU-T1-GE3 Datasheet Page 7SI5857DU-T1-GE3 Datasheet Page 8SI5857DU-T1-GE3 Datasheet Page 9SI5857DU-T1-GE3 Datasheet Page 10

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