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SI7117DN-T1-E3


Part Number SI7117DN-T1-E3
Zouser Part # SI7117DN-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 150V 2.17A 1212-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI7117DN-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI7117DN-T1-E3 Specifications

Part Number SI7117DN-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8

SI7117DN-T1-E3 Documents

SI7117DN-T1-E3, SI7117DN-T1-E3 Datasheet (Total Pages: 13, Size: 603.01 KB)
SI7117DN-T1-GE3 Datasheet CoverSI7117DN-T1-GE3 Datasheet Page 2SI7117DN-T1-GE3 Datasheet Page 3SI7117DN-T1-GE3 Datasheet Page 4SI7117DN-T1-GE3 Datasheet Page 5SI7117DN-T1-GE3 Datasheet Page 6SI7117DN-T1-GE3 Datasheet Page 7SI7117DN-T1-GE3 Datasheet Page 8SI7117DN-T1-GE3 Datasheet Page 9SI7117DN-T1-GE3 Datasheet Page 10SI7117DN-T1-GE3 Datasheet Page 11SI7117DN-T1-GE3 Datasheet Page 12SI7117DN-T1-GE3 Datasheet Page 13

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