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SI7386DP-T1-E3


Part Number SI7386DP-T1-E3
Zouser Part # SI7386DP-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A PPAK SO-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI7386DP-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI7386DP-T1-E3 Specifications

Part Number SI7386DP-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

SI7386DP-T1-E3 Documents

SI7386DP-T1-E3, SI7386DP-T1-E3 Datasheet (Total Pages: 12, Size: 292.36 KB)
SI7386DP-T1-GE3 Datasheet CoverSI7386DP-T1-GE3 Datasheet Page 2SI7386DP-T1-GE3 Datasheet Page 3SI7386DP-T1-GE3 Datasheet Page 4SI7386DP-T1-GE3 Datasheet Page 5SI7386DP-T1-GE3 Datasheet Page 6SI7386DP-T1-GE3 Datasheet Page 7SI7386DP-T1-GE3 Datasheet Page 8SI7386DP-T1-GE3 Datasheet Page 9SI7386DP-T1-GE3 Datasheet Page 10SI7386DP-T1-GE3 Datasheet Page 11SI7386DP-T1-GE3 Datasheet Page 12

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