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SI7457DP-T1-E3


Part Number SI7457DP-T1-E3
Zouser Part # SI7457DP-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 100V 28A PPAK SO-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI7457DP-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock333 - More on Order
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SI7457DP-T1-E3 Specifications

Part Number SI7457DP-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5230pF @ 50V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

SI7457DP-T1-E3 Documents

SI7457DP-T1-E3, SI7457DP-T1-E3 Datasheet (Total Pages: 13, Size: 301.31 KB)
SI7457DP-T1-GE3 Datasheet CoverSI7457DP-T1-GE3 Datasheet Page 2SI7457DP-T1-GE3 Datasheet Page 3SI7457DP-T1-GE3 Datasheet Page 4SI7457DP-T1-GE3 Datasheet Page 5SI7457DP-T1-GE3 Datasheet Page 6SI7457DP-T1-GE3 Datasheet Page 7SI7457DP-T1-GE3 Datasheet Page 8SI7457DP-T1-GE3 Datasheet Page 9SI7457DP-T1-GE3 Datasheet Page 10SI7457DP-T1-GE3 Datasheet Page 11SI7457DP-T1-GE3 Datasheet Page 12SI7457DP-T1-GE3 Datasheet Page 13

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