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SI7703EDN-T1-GE3


Part Number SI7703EDN-T1-GE3
Zouser Part # SI7703EDN-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 4.3A 1212-8 PPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI7703EDN-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI7703EDN-T1-GE3 Specifications

Part Number SI7703EDN-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8

SI7703EDN-T1-GE3 Documents

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