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SI8441DB-T2-E1


Part Number SI8441DB-T2-E1
Zouser Part # SI8441DB-T2-E1
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 10.5A 2X2 6MFP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI8441DB-T2-E1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock384 - More on Order
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SI8441DB-T2-E1 Specifications

Part Number SI8441DB-T2-E1
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA

SI8441DB-T2-E1 Documents

SI8441DB-T2-E1, SI8441DB-T2-E1 Datasheet (Total Pages: 9, Size: 115.61 KB)
SI8441DB-T2-E1 Datasheet CoverSI8441DB-T2-E1 Datasheet Page 2SI8441DB-T2-E1 Datasheet Page 3SI8441DB-T2-E1 Datasheet Page 4SI8441DB-T2-E1 Datasheet Page 5SI8441DB-T2-E1 Datasheet Page 6SI8441DB-T2-E1 Datasheet Page 7SI8441DB-T2-E1 Datasheet Page 8SI8441DB-T2-E1 Datasheet Page 9

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