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SI8497DB-T2-E1
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SI8497DB-T2-E1


Part Number SI8497DB-T2-E1
Zouser Part # SI8497DB-T2-E1
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 30V 13A MICROFOOT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI8497DB-T2-E1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock4,310 - More on Order
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SI8497DB-T2-E1 Specifications

Part Number SI8497DB-T2-E1
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 15V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-microfoot
Package / Case 6-UFBGA

SI8497DB-T2-E1 Documents

SI8497DB-T2-E1, SI8497DB-T2-E1 Datasheet (Total Pages: 8, Size: 173.07 KB)
SI8497DB-T2-E1 Datasheet CoverSI8497DB-T2-E1 Datasheet Page 2SI8497DB-T2-E1 Datasheet Page 3SI8497DB-T2-E1 Datasheet Page 4SI8497DB-T2-E1 Datasheet Page 5SI8497DB-T2-E1 Datasheet Page 6SI8497DB-T2-E1 Datasheet Page 7SI8497DB-T2-E1 Datasheet Page 8

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