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SIB412DK-T1-E3


Part Number SIB412DK-T1-E3
Zouser Part # SIB412DK-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 9A SC75-6
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SIB412DK-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock294 - More on Order
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Lead-TimeTo be Confirmed
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SIB412DK-T1-E3 Specifications

Part Number SIB412DK-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.16nC @ 5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 10V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6L Single
Package / Case PowerPAK® SC-75-6L

SIB412DK-T1-E3 Documents

SIB412DK-T1-E3, SIB412DK-T1-E3 Datasheet (Total Pages: 7, Size: 137.34 KB)
SIB412DK-T1-GE3 Datasheet CoverSIB412DK-T1-GE3 Datasheet Page 2SIB412DK-T1-GE3 Datasheet Page 3SIB412DK-T1-GE3 Datasheet Page 4SIB412DK-T1-GE3 Datasheet Page 5SIB412DK-T1-GE3 Datasheet Page 6SIB412DK-T1-GE3 Datasheet Page 7

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