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SIDR610DP-T1-GE3 |
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Part Number | SIDR610DP-T1-GE3 |
Zouser Part # | SIDR610DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CHAN 200V PPAK SO-8DC |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SIDR610DP-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 31 - Feb 5 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 10,132 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
SIDR610DP-T1-GE3 Specifications
Part Number | SIDR610DP-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | |
Rds On (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® SO-8DC | |
Package / Case | PowerPAK® SO-8 |
SIDR610DP-T1-GE3 Documents
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